# title
Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning

# abstract
<jats:p>An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed.  Vt tuning depends on rare earth (RE) type and diffusion in Si/SiOx/HfSiON/REOx/metal gated nFETs as follows: Sr < Er < Sc+Er < La < Sc < none.  This Vt ordering is very similar to the trends in dopant electronegativity (EN, dipole charge transfer) and ionic radius (r, dipole separation) expected for a interfacial dipole mechanism.  The resulting Vt dependence on RE dopant allows distinction between a dipole model (dependent on EN and r) and an oxygen vacancy model (dependent on valence).</jats:p>

# publicationOutlet
ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT

# authorList[]
Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Park, C. S., Freeman, K., ... Jammy, R.