# title
DOPING PROCESS-CONTROL IN SILICON EPITAXY .1. SYSTEM-IDENTIFICATION

# abstract
The transition behaviour of the phosphorus incorporation in silicon epitaxial layers grown in a CVD reactor has been investigated, considering the reactor as a linear control system with u = lg p0PH3 (t) as the input and y = lg N(t) as the output. The response of system to both upward and downward step inputs has been studied experimentally, using SiH4 and PH3 sources. The dopant system of a horizontal silicon epitaxial reactor has been identified and a mathematical model relating to the transient behaviour of the system has been found. The parameters of the model have been estimated from layer growth experiments. The step response functions found can be approximated by an exponential function relating to n time constants T, all equal to each other. It was found for the system investigated that the second order model is of sufficient accuracy for the optimal control calculations described in the next part of this series. Copyright  1983 WILEYVCH Verlag GmbH & Co. KGaA

# publicationVenue.label
Crystal Research and Technology: journal of experimental and industrial crystallography

# authorList[]
KOSZA, G., MORGENSTERN, T., RICHTER, F., & VALKO, P.