# title
Using AG theory to model a S/I/N tunnel junction

# abstract
We have measured the spin polarized tunneling conductance of a thin Al/Al2O3/amorphous GdxSi1-x planar tunnel junction at T=25 mK in parallel magnetic field H3.0 T. Abrikosov-Gorkov theory is a better model for the thin superconducting Al electrode than previously used Bardeen-Cooper-Schrieffer theory. As the magnetic field is increased, we find the best fit to the data by modelling a transition from a superconductor with gap (<1) to a gapless superconductor (>1).  2007 Elsevier B.V. All rights reserved.

# authorList[]
Srivastava, R. A., Teizer, W., Hellman, F., & Dynes, R. C.