# title
The Hall effect in a-GdxSi1-x at the metal-insulator transition

# abstract
We have measured the Hall effect in 3-d amorphous GdxSi1-x films in the critical regime of the metal-insulator transition (MIT) at T = 400 mK. a-GdxSi1-x exhibits a large negative magnetoresistance which is independent of the orientation of the magnetic field H with respect to the film and allows an in situ tuning of the conductivity through the MIT with H. We find an electron-like Hall coefficient RH. As the material becomes less metallic, RH increases. We find that RH is a critical quantity with critical exponent -1(RH(H-HC)-1).  2003 Elsevier Science B.V. All rights reserved.

# publicationVenue.label
Physica E: Low-Dimensional Systems and Nanostructures