# overview
My research interests incluse CMOS and Silicon technology, materials integration, novel electrical and physical device and materials characterization, III-V and nanophotonics, self-assembled nanotechnology, and Supercritical Fluid Processing and Deposition.

# keywords[]
Metalorganic Chemical Vapor Phase Deposition (mocvd) Gan-on-si

# educationAndTraining[].organization.label
Texas Tech University - (Amarillo, Texas, United States)

# educationAndTraining[].organization.label
Texas Tech University - (Amarillo, Texas, United States)

# educationAndTraining[].organization.label
Texas Tech University - (Amarillo, Texas, United States)

# publications[].label
Systematic gate stack optimization to maximize mobility with HfSiON EOT scaling

# publications[].label
Flexible, Simplified CMOS on Si(110) with Metal Gate / High  for HP and LSTP

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Electrical Observation of Deep Traps in High-$Kappa$/Metal Gate Stack Transistors

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Limiting native oxide regrowth for high-k gate dielectrics

# publications[].label
New Hot-Carrier Degradation Phenomenon in Nano-Scale Floating Body MOSFETs

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

# publications[].label
Dipole Model Explaining High-k/Metal Gate Threshold Voltage Tuning

# publications[].label
Metal gate work function engineering using AlNx interfacial layers

# publications[].label
Modulation of the work function of silicon gate electrode using thin TaN interlayers

# publications[].label
A Simplified Superior Floating-Body/Gate DRAM Cell

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Adjusting to 3D Devices in a 2D Device World

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
HIGH MOBILITY SIGE SHELL-SI CORE OMEGA GATE PFETS

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Datapath system for multiple electron beam lithography systems using image compression

# publications[].publisher
SPIE, the international society for optics and photonics

# publications[].label
Systematic Investigation of Amorphous Transition-Metal-Silicon-Nitride Electrodes for Metal Gate CMOS Applications

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
New Results from the Search for Low-Mass Weakly Interacting Massive Particles with the CDMS Low Ionization Threshold Experiment.

# publications[].label
Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe and a Method to Enable sub-1nm EOT

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Light Dark Matter Search with a High-Resolution Athermal Phonon Detector Operated above Ground.

# publications[].label
First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector.

# publications[].label
TMAH wet etching of silicon micro- and nano-fins for selective sidewall epitaxy of III-Nitride semiconductors

# publications[].label
Constraints on Lightly Ionizing Particles from CDMSlite.

# publications[].label
High Performing pMOSFETs on Si(110) for Application to Hybrid Orientation Technologies - Comparison of Hf02 and HfSiON

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices

# publications[].label
Mask registration and lithography platform portability for nitride fin-based field effect transistors prototyping

# publications[].label
Determination of oscillator strength of CF vibrations in fluorinated amorphous-carbon films by infrared spectroscopy

# publications[].label
Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric

# publications[].label
Demonstration of surface electron rejection with interleaved germanium detectors for dark matter searches

# publications[].label
Production rate measurement of Tritium and other cosmogenic isotopes in Germanium with CDMSlite

# publications[].label
Evaluation of tantalum silicon alloy systems as gate electrodes

# publications[].label
First direct limits on lightly ionizing particles with electric charge less than e/6.

# publications[].label
Understanding Strain Effects on Double-Gate FinFET Drive-Current Enhancement, Hot-Carrier Reliability and Ring-Oscillator Delay Performance via Uniaxial Wafer Bending Experiments

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Simulation of a Multidimensional Input Quantum Perceptron

# publications[].label
Background studies for the MINER Coherent Neutrino Scattering reactor experiment

# publications[].label
Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Improved Ge Surface Passivation with Ultrathin $ hbox{SiO}_{X}$ Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Detection of Trap Generation in High- GateStacks

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Silicon detector results from the first five-tower run of CDMS II

# publications[].label
PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
RF Dielectric Loss Due to MOCVD Aluminum Nitride on High Resistivity Silicon

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-V-Th Engineering

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Initial growth of interfacial oxide during deposition of HfO2 on silicon

# publications[].label
Effective work function modification of atomic-layer-deposited-TaN film by capping layer

# publications[].label
Silicon detector dark matter results from the final exposure of CDMS II.

# publications[].label
Low-mass dark matter search with CDMSlite

# publications[].label
Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Maximum likelihood analysis of low energy CDMS II germanium data

# publications[].label
Composition dependence of the work function of Ta1xAlxNy metal gates

# publications[].label
Wet etching silicon nanofins with (111)-oriented sidewalls

# publications[].label
Electrical properties of fluorinated amorphous carbon films

# publications[].label
Enhanced Performance and SRAM Stability in FinFET with Reduced Process Steps for Source/Drain Doping

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Dark matter effective field theory scattering in direct detection experiments

# publications[].label
On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
High quality AlN for deep UV photodetectors

# publications[].label
Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

# publications[].label
Search for low-mass weakly interacting massive particles using voltage-assisted calorimetric ionization detection in the SuperCDMS experiment.

# publications[].label
Structural properties of fluorinated amorphous carbon films

# publications[].label
Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride

# publications[].label
Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs

# publications[].label
New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Constraints on dark photons and axionlike particles from the SuperCDMS Soudan experiment

# publications[].label
Band offset measurements of the GaN/dielectric interfaces

# publications[].label
Toward single electron resolution phonon mediated ionization detectors

# publications[].label
Search for low-mass weakly interacting massive particles with SuperCDMS.

# publications[].label
Cleaning of Si and properties of the HfO2Si interface

# publications[].label
Temperature dependence of the work function of ruthenium-based gate electrodes

# publications[].label
Nuclear-recoil energy scale in CDMS II silicon dark-matter detectors

# publications[].label
Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics

# publications[].label
Demonstration of High Performance Transistors with PVD Metal Gate

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Work function extraction of metal gates with alternate channel materials

# publications[].label
HfO2 gate dielectric with 0.5 nm equivalent oxide thickness

# publications[].label
Search for low-mass dark matter with CDMSlite using a profile likelihood fit

# publications[].label
Comparison of Effective Work Function Extraction Methods Using Capacitance and Current Measurement Techniques

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Optical studies of the effect of oxidation on GaN

# publications[].label
Developing a systematic approach to metal gates and high-k dielectrics in future-generation CMOS

# publications[].label
Impact of Bottom Interfacial Layer on the Threshold Voltage and Device Reliability of Fluorine Incorporated PMOSFETs with High-K/Metal Gate

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Energy loss due to defect formation from Pb-206 recoils in SuperCDMS germanium detectors

# publications[].label
Results from the Super Cryogenic Dark Matter Search Experiment at Soudan.

# publications[].label
Reducing the interfacial formation of SiOx in HFO <inf>2</inf> MOS structures: A study in pre-deposition cleaning, surface oxidation and post-deposition annealing

# publications[].label
The effects of Ge composition and Si cap thickness on hot carrier reliability of Si/Si1-xGex/Si p-MOSFETs with high-$K$/metal gate

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Simplified manufacturable band edge metal gate solution for NMOS without a capping layer

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Projected sensitivity of the SuperCDMS SNOLAB experiment

# publications[].label
Improved WIMP-search reach of the CDMS II germanium data

# publications[].label
Design Considerations to Enhance the Modulation Efficiency and Cutoff Frequency of AlGaN/InGaN/GaN HEMTs

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Strain Additivity in III-V Channels for CMOSFETs beyond 22nm Technology Node

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
GaN stripes on vertical {111} fin facets of (110)-oriented Si substrates

# publications[].label
Detection of Electron Trap Generation due to Constant Voltage Stress on High- Gate Stacks

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Recovery of NBTI degradation in HfSiON/metal gate transistors

# publications[].label
High Performance pMOSFETs using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

# publications[].label
Critical Components of FinFet Integration: Examining the Density Trade-off and Process Integration for FinFET Implementation

# publications[].label
Cryogenic Dark Matter Search detector fabrication process and recent improvements (vol 772, pg 14, 2015)

# publications[].label
Constraints on low-mass, relic dark matter candidates from a surface-operated SuperCDMS single-charge sensitive detector

# publications[].label
Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

# publications[].publisher
Institute of Electrical and Electronics Engineers (IEEE)

# publications[].label
Cryogenic Dark Matter Search detector fabrication process and recent improvements

# publications[].label
The Challenges in Introducing PMOS Dual Channel in CMOS Processing

# researcherOn[].label
Ultra-Low Threshold Cryogenic High Voltage Detectors For WIMP Search And Coherent Neutrino Scattering Experiments

# researcherOn[].awardedBy.label
United States Department of Energy - (Washington D.C., District of Columbia, United States)

# researcherOn[].label
The SuperCDMS Program at Texas A&M University-

# researcherOn[].awardedBy.label
United States Department of Energy - (Washington D.C., District of Columbia, United States)

# researcherOn[].label
CDMS Crystal Polishing at Texas A&M University

# researcherOn[].awardedBy.label
SLAC National Accelerator Laboratory - (Menlo Park, California, United States)

# researcherOn[].awardedBy.label
SLAC National Accelerator Laboratory - (Menlo Park, California, United States)

# streetAddress
Texas A&M University; Electrical Engineering; 3128 TAMU

# etdChairOf[].label
Johnson, Derek Wade (2014-07). Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors. Doctoral Dissertation.

# etdChairOf[].label
Coan, Mary (2012-10). Impact of Chemical States on the Effective Work Function of Metal Gate and High-kappa Dielectric Materials on Novel Heterostructures. Doctoral Dissertation.

# etdChairOf[].label
Rezanezhad Gatabi, Iman (2013-06). Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications. Doctoral Dissertation.

# etdChairOf[].label
Prasad, Kunj Bihari (2013-12). Search for Lightly Ionizing Particles Using CDMS-II Data and Fabrication of CDMS Detectors with Improved Homogeneity in Properties. Doctoral Dissertation.

# etdChairOf[].label
Berber, Feyza (2017-05). Microwave Characterization of GaN-on-Si Heterostructure Loss and 2DEG as a Conductor. Doctoral Dissertation.

# etdChairOf[].label
Suh, Jae Woo (2016-12). Device Design Parameterization of III-V Multi-Gate FETs. Doctoral Dissertation.

# etdChairOf[].label
Ravikirthi, Pradhyumna (2014-08). Au-free Ohmic Contacts to Gallium Nitride and Graphene. Master's Thesis.

# etdChairOf[].label
Sharma, Pranav (2015-11). Fabrication and Characterization of Al / AlOx / Al Josephson Junctions. Master's Thesis.